Investigating the Linearity Performance of DMG AlGaN/GaN HEMT for Improved RF Applications
نویسندگان
چکیده
In the present work, Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been studied for its improved linearity performance on the basis of VIP3 (i.e. extrapolated input voltage at which the first and third order harmonic voltages are equal) and compared with the conventional Single Material Gate (SMG) AlGaN/GaN HEMT. The influence of the device parameters such as the channel length, drain bias variations, doping of the barrier layer, thickness of the barrier layer and spacer layer has been investigated using ATLAS device simulation. We observe that a properly designed DMG AlGaN/GaN HEMT can improve the linearity performance significantly due to its enhanced carrier transport velocity, reduced hot electron effect and suppressed DIBL for application in third generation mobile communication and low noise amplifiers.
منابع مشابه
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor
0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.09.033 ⇑ Corresponding author. Tel.: +91 11 24115580; fax E-mail addresses: [email protected] ( (R.S. Gupta). 1 Tel.: +91 11 24115580; fax: +91 11 24110606. In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance o...
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